Dr.-Ing. Julietta Förthner

Lehrstuhl für Elektronische Bauelemente Chair of Applied Physics (LAP)

Low-Temperature Characterization of Sheet and Contact Resistance in 4H-SiC Test Structures from 300 K to 4 K (2026) Hobbacher E, Magerl F, Pixius C, Förthner J, May A, Rommel M, Schulze J Conference contribution A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation (2023) Weiße J Authored book, Volume of book series RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC (2020) Weiße J, Matthus C, Schlichting H, Mitlehner H, Erlbacher T Journal article Deeper insight into lifetime-engineering in 4H-SiC by ion implantation (2019) Erlekampf J, Kallinger B, Weiße J, Rommel M, Berwian P, Friedrich J, Erlbacher T Journal article Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019) Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019) Weiße J, Mitlehner H, Frey L, Erlbacher T Conference contribution Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices (2018) Weiße J, Hauck M, Sledziewski T, Tschiesche M, Krieger M, Bauer A, Mitlehner H, et al. Journal article, Report