An Impedance-Boosted Ka-Band Colpitts VCO with a PN1MHz of −107 dBc/Hz in 90 nm SiGe BiCMOS Technology

Isbilen T, Breun S, Arneth N, Schrotz AM, Koch M, Berwald A, Weigel R, Franchi N (2026)


Publication Type: Conference contribution, Conference Contribution

Publication year: 2026

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2026 IEEE Wireless and Microwave Technology Conference, WAMICON 2026

Event location: Clearwater, FL, USA US

ISBN: 9798331583453

DOI: 10.1109/WAMICON68738.2026.11602012

Abstract

This paper presents a high-performance millimeter-wave voltage-controlled oscillator (VCO). The circuit utilizes an impedance-boosted Colpitts topology to achieve a superior tradeoff between power consumption, phase noise, and tuning range. The VCO demonstrates a continuous tuning range of 12.7%, spanning from 33.8 GHz to 38.4 GHz. At a fundamental frequency of 35.2 GHz, a minimum phase noise of -107.1 dBc/Hz is achieved at a 1MHz offset. With a core power consumption of 36.8mW and an active area of 0.095mm2, the design attains a peak Figure of Merit (FoM) of 182.4 dBc/Hz, a FoMT of 184.4 dBc/Hz and a FoMA of 192.6 dBc/Hz. The circuit was fabricated in a 90nm SiGe BiCMOS process with ft/fmax of 300 GHz/500 GHz, respectively.

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How to cite

APA:

Isbilen, T., Breun, S., Arneth, N., Schrotz, A.-M., Koch, M., Berwald, A.,... Franchi, N. (2026). An Impedance-Boosted Ka-Band Colpitts VCO with a PN1MHz of −107 dBc/Hz in 90 nm SiGe BiCMOS Technology. In 2026 IEEE Wireless and Microwave Technology Conference, WAMICON 2026. Clearwater, FL, USA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Isbilen, Timur, et al. "An Impedance-Boosted Ka-Band Colpitts VCO with a PN1MHz of −107 dBc/Hz in 90 nm SiGe BiCMOS Technology." Proceedings of the 2026 IEEE Wireless and Microwave Technology Conference (WAMICON), Clearwater, FL, USA Institute of Electrical and Electronics Engineers Inc., 2026.

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